PART |
Description |
Maker |
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283 |
1GB PC133 (2-2-2) 2-bank available 2Q02 512MB PC133 (3-3-3) 1-bank POT 100 OHM 3/8 SQ CERM SL ST 2GB PC133 (3-3-3) 2-bank available 4Q02 256MB PC133 (3-3-3) 1-bank End-of-Life 512MB PC100 (2-2-2) 1-bank End-of-Life 1GB PC133 (3-3-3) 2-bank End-of-Life 2GB PC133 (2-2-2) 2-bank available 4Q02 PC133 Registered SDRAM-Modules PC133的SDRAM的注册模 1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的(3-3-3银行提供待定 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
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Infineon Technologies AG Infineon Technologies A...
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KM416RD8AS-SCM80 KM416RD8AS KM416RD8AS-RBM80 |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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SIOV-S10K20 SIOV-S05K250 SIOV-S20K1000 SIOV-S20K11 |
RESISTOR, VOLTAGE DEPENDENT, 26 V, 3.1 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 320 V, 8.2 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 1465 V, 410 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 14 V, 10 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 150 V, 60 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 170 V, 74 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 180 V, 78 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 200 V, 85 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 22 V, 14 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 26 V, 18 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 300 V, 130 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 31 V, 22 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 320 V, 140 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 350 V, 151 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 38 V, 26 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 150 V, 3.6 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 200 V, 4.9 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 180 V, 4.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 22 V, 0.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 225 V, 5.6 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 100 V, 2.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 45 V, 2.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 100 V, 5.9 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 45 V, 5.4 J, THROUGH HOLE MOUNT RADIAL LEADED Leaded varistors, StandarD series SIOV metal oxide varistors SIOV metal oxide varistors
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爱普科斯(中国)投资有限公司 EPCOS
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IDT70V7519S IDT70V7519S133BC IDT70V7519S133BCI IDT |
HIGH-SPEED 3.3V 256K x 36 SYNCHRONOUS BANK-SWITCHABLE DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE
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IDT[Integrated Device Technology]
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R61ZOV231RA35 R6221ZOV181RA07 R6521ZOV170RA15 R692 |
RESISTOR, VOLTAGE DEPENDENT, 300 V, 35 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 230 V, 35 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 22 V, 15 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 160 V, 35 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 360 V, 23 J, THROUGH HOLE MOUNT RESISTOR, VOLTAGE DEPENDENT, 200 V, 23 J, THROUGH HOLE MOUNT
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Maida Development Company Moeller Electric, Corp.
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MBM29F400TA MBM29F400BA |
4M (512K×8/256K ×16) Bit Flash Memory(4M V 电源电压512K×8/256K ×16位闪速存储器) 4分(12k × 8/256K × 16)位闪存分单5V的电源电压为512k × 8/256K × 16位闪速存储器
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Fujitsu Limited
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IDT70V7278S |
HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
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Integrated Device Technology
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IDT707288S_L 707288_DS_26036 IDT707288S15PF IDT707 |
64K x 16 Asynchronous Bank-Switchable Dual-Port SRAM From old datasheet system HIGH-SPEED 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
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IDT[Integrated Device Technology]
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SIOV-B32K130 SIOV-B40K230 SIOV-B40K150 SIOV-B80K15 |
RESISTOR, VOLTAGE DEPENDENT, 170 V, 210 J, CHASSIS MOUNT RESISTOR, VOLTAGE DEPENDENT, 300 V, 460 J, CHASSIS MOUNT RESISTOR, VOLTAGE DEPENDENT, 200 V, 360 J, CHASSIS MOUNT RESISTOR, VOLTAGE DEPENDENT, 200 V, 800 J, CHASSIS MOUNT
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SIEMENS AG
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PTCSSLVT151DBE PTCSSLVT101DBE |
Temperature Dependent Resistor, RESISTOR, TEMPERATURE DEPENDENT, PTC, 1330 ohm, CHASSIS MOUNT, RADIAL LEADED, ROHS COMPLIANT
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Vishay BCcomponents
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PTCSSCWT151DBE |
Temperature Dependent Resistor, RESISTOR, TEMPERATURE DEPENDENT, PTC, 100 ohm, CHASSIS MOUNT, ROHS COMPLIANT
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Vishay BCcomponents
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